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Darlington

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Number of views:
1005
NO.:
EM6K34
Category
transistor
Quantity
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+
Stock:
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Product description
Parameters

[Overview]

Electricity sector, the effect transistor MOSFET. Composite two Nch MOSFET. Provided through the use of subtle process of "ultra-low resistance of the device" and the field was applied in a wide range of power MOSFET, and the combination of uses to a variety of small high-power product line corresponds to the complex variety of market demand.

Specialty

• 10V-driven Power MOSFET Nch + Pch



Product Specifications

The absolute maximum ratings (Ta=25ºC)

Rated parameters

Standard value

Conditions

Drain-Source voltage VDSS(V)

50

 

Gate-Source voltage VGSS(V)

±8

 

Drain current(continuous) ID(A)

±0.2

 

Source current(body Di) IS(A)

0.125

 

Total power dissipation PD(W)

0.15

Each terminal mounted on a recommended land pattern

Channel temperature Tch(ºC)

150

 

Storage temperature Tstg(ºC)

-55 +150

 

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Copyright 2020 © SHENZHEN SHUNBAI TECHNOLOGY CO.,LTD.
粤ICP备11053228号 Powered by www.300.cn