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Darlington
Retail price
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Number of views:
1005
NO.:
EM6K34
Category
transistor
Quantity
-
+
Stock:
0
1
Product description
Parameters
[Overview]
Electricity sector, the effect transistor MOSFET. Composite two Nch MOSFET. Provided through the use of subtle process of "ultra-low resistance of the device" and the field was applied in a wide range of power MOSFET, and the combination of uses to a variety of small high-power product line corresponds to the complex variety of market demand.
Specialty
• 10V-driven Power MOSFET Nch + Pch
Product Specifications
|
The absolute maximum ratings (Ta=25ºC) |
||
|
Rated parameters |
Standard value |
Conditions |
|
Drain-Source voltage VDSS(V) |
50 |
|
|
Gate-Source voltage VGSS(V) |
±8 |
|
|
Drain current(continuous) ID(A) |
±0.2 |
|
|
Source current(body Di) IS(A) |
0.125 |
|
|
Total power dissipation PD(W) |
0.15 |
Each terminal mounted on a recommended land pattern |
|
Channel temperature Tch(ºC) |
150 |
|
|
Storage temperature Tstg(ºC) |
-55 ～+150 |
|
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