Detailed

[Product Summary]
? Planer type MOSFET of SiC (silicon carbide).
High voltage resistance? Low on-resistance? High-speed switch, realizing miniaturization and energy-saving of the whole machine.

Speciality
?• N-ch SiC power MOSFET
• Low on-resistance
• Small increase in conduction resistance at high temperature
• High speed switch

Product specification

 

Absolute maximum rating (Ta=25 º C)

Rated parameters

Standard value

Conditions

Drain-Source voltage VDSS(V)

600

 

Gate-Source voltage VGSS(V)

-3 +22

 

Drain current(continuous) ID(A)

10

Please use the device with SOA(safety operation area)

Source current(body Di) IS

-

 

Total power dissipation PD

-

 

Channel temperature Tch(ºC)

150

 

Storage temperature Tstg(ºC)

-55 +150

 

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0755-23981185

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CONTACT US

Add:Room 1505,Haisong Building A,Tairan Industrial & Trading Park,Chegongmiao,Shenzhen

Zip:518040

Tel:0755-23981185

Email:shunbai@vip.163.com

 

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