All products
Schottky barrier diode
Category：
Detailed
[Product Summary]
? Planer type MOSFET of SiC (silicon carbide).
High voltage resistance? Low on-resistance? High-speed switch, realizing miniaturization and energy-saving of the whole machine.
Speciality
?• N-ch SiC power MOSFET
• Low on-resistance
• Small increase in conduction resistance at high temperature
• High speed switch
Product specification
| Absolute maximum rating (Ta=25 º C) | ||
|
Rated parameters |
Standard value |
Conditions |
|
Drain-Source voltage VDSS(V) |
600 |
|
|
Gate-Source voltage VGSS(V) |
-3 ～+22 |
|
|
Drain current(continuous) ID(A) |
10 |
Please use the device with SOA(safety operation area) |
|
Source current(body Di) IS |
- |
|
|
Total power dissipation PD |
- |
|
|
Channel temperature Tch(ºC) |
150 |
|
|
Storage temperature Tstg(ºC) |
-55 ～+150 |
|
key word:
Prev：
Next：
Related products
Online Inquiry
CONTACT US
Add：Room 1505,Haisong Building A,Tairan Industrial & Trading Park,Chegongmiao,Shenzhen
Zip：518040
Tel：0755-23981185
Email：shunbai@vip.163.com
QR code
Mobile
Online Message