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[Product Summary]
? MOSFET of electric power transistor. It provides energy-saving power MOSFETs generated by "ultra-low resistance devices for communication products" using fine processes, and combines applications to meet various market demands with a variety of small and high power composite product lines.
Speciality
?• 0.9V drive type Nch small signal MOSFET
Product specification
Absolute maximum rating (Ta=25 º C) | ||
Rated parameters |
Standard value |
Conditions |
Drain-Source voltage VDSS(V) |
50 |
|
Gate-Source voltage VGSS(V) |
±8 |
|
Drain current(continuous) ID(A) |
±0.2 |
|
Source current(body Di) IS(A) |
0.125 |
|
Total power dissipation PD(W) |
0.15 |
Each terminal mounted on a recommended land pattern |
Channel temperature Tch(ºC) |
150 |
|
Storage temperature Tstg(ºC) |
-55 ~+150 |
|
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Zip:518040
Tel:0755-23981185
Email:shunbai@vip.163.com
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