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[Product Summary]
? Electric boundary effect transistor MOSFET. Composite two Nch MOSFETs. It provides power MOSFETs that have been applied in a wide range of fields through the use of "ultra-low resistance devices" with fine processes, and combines applications to meet various market demands with a variety of small and high power composite product lines.
Speciality
?• 10V drive type Nch+Pch medium power MOSFET
Product specification

 

Absolute maximum rating (Ta=25 º C)

Rated parameters

Standard value

Conditions

Drain-Source voltage VDSS(V)

50

 

Gate-Source voltage VGSS(V)

±8

 

Drain current(continuous) ID(A)

±0.2

 

Source current(body Di) IS(A)

0.125

 

Total power dissipation PD(W)

0.15

Each terminal mounted on a recommended land pattern

Channel temperature Tch(ºC)

150

 

Storage temperature Tstg(ºC)

-55 +150

 

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Add:Room 1505,Haisong Building A,Tairan Industrial & Trading Park,Chegongmiao,Shenzhen

Zip:518040

Tel:0755-23981185

Email:shunbai@vip.163.com

 

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