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[Product Summary]
? Electric boundary effect transistor MOSFET. Composite two Nch MOSFETs. It provides power MOSFETs that have been applied in a wide range of fields through the use of "ultra-low resistance devices" with fine processes, and combines applications to meet various market demands with a variety of small and high power composite product lines.
Speciality
?• 10V drive type Nch+Pch medium power MOSFET
Product specification
| Absolute maximum rating (Ta=25 º C) | ||
|
Rated parameters |
Standard value |
Conditions |
|
Drain-Source voltage VDSS(V) |
50 |
|
|
Gate-Source voltage VGSS(V) |
±8 |
|
|
Drain current(continuous) ID(A) |
±0.2 |
|
|
Source current(body Di) IS(A) |
0.125 |
|
|
Total power dissipation PD(W) |
0.15 |
Each terminal mounted on a recommended land pattern |
|
Channel temperature Tch(ºC) |
150 |
|
|
Storage temperature Tstg(ºC) |
-55 ～+150 |
|
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Tel：0755-23981185
Email：shunbai@vip.163.com
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